Surface Modification of Gallium Arsenide by Electrochemical Methods in Different Electrolyte Compositions
نویسندگان
چکیده
We present the study of n-GaAs surface modification by electrochemical etching in different electrolyte compositions. The possibility forming micromorphology types on identical GaAs samples, particular crystallographic, defective-dislocation, and isotope interfaces, was investigated.
منابع مشابه
Photoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition
Photoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition
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متن کاملGALLIUM ARSENIDE 1. Exposure Data
1.1.3 Chemical and physical properties of the pure substance (a) Description: Grey, cubic crystals (Lide, 2003) (b) Melting-point: 1238 °C (Lide, 2003) (c) Density: 5.3176 g/cm (Lide, 2003) (d) Solubility: Insoluble in water (Wafer Technology Ltd, 1997); slightly soluble in 0.1 M phosphate buffer at pH 7.4 (Webb et al., 1984) (e) Stability: Decomposes with evolution of arsenic vapour at tempera...
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ژورنال
عنوان ژورنال: Chemistry and Chemical Technology
سال: 2023
ISSN: ['1996-4196']
DOI: https://doi.org/10.23939/chcht17.02.262